S9227 features l pixel pitch: 12.5 ? pixel height: 250 ? l number of pixels: 512 ch l single 5 v power supply operation l video data rate: 5 mhz max. l simultaneous charge integration l shutter function l high sensitivity, low dark current, low noise l built-in timing generator allows operation with only start and clock pulse inputs l spectral response range: 400 to 1000 nm l 8-pin dip, 16-pin surface mount type also available applications l position detection l image reading image sensor cmos linear image sensor high-speed readout, simultaneous integration S9227 is a small cmos linear image sensor designed for image input applications. signal charge is integrated on all pixels simu ltaneously and then read out at high speeds of 5 mhz. 1 absolute maximum ratings parameter symbol value unit supply voltage vdd -0.3 to +6 v clock pulse voltage v (clk) -0.3 to +6 v start pulse voltage v (st) -0.3 to +6 v operating temperature * 1 topr -5 to +60 c storage temperature tstg -10 to +70 c *1: no condensation mechanical specifications parameter value unit number of pixels 512 - pixel pitch 12.5 m pixel height 250 m active area length 6.4 mm window material tempax -
cmos linear image sensor S9227 2 recommended terminal voltage parameter symbol min. typ. max. unit supply voltage vdd 4.75 5 5.25 v high vdd-0.25 vdd vdd+0.25 v clock pulse voltage low v (clk) - 0 - v high vdd-0.25 vdd vdd+0.25 v start pulse voltage low v (st) -0-v electrical characteristics [ta=25 c, vdd=5 v, v (clk) =v (st)=5 v] parameter symbol min. typ. max. unit clock pulse frequency f (clk) 0.05 - 5 mhz video data rate vr - f (clk) - mhz power consumption p - 150 180 mw conversion efficiency ce - 1.6 - v/e - output impedance * 2 zo - 50 200 ? electrical and optical characteristics [ta=25 c, vdd=5 v, v (clk)=v (st)=5 v] parameter symbol min. typ. max. unit spectral response range 400 to 1000 nm peak sensitivity wavelength p - 700 - nm dark current i d -550fa saturation charge qsat 320 420 - fc dark output voltage * 3 vd - 0.5 5 mv saturation output voltage * 4 vsat 3.2 4.2 - v readout noise nr - 0.4 1.0 mv rms offset output voltage vo - 0.6 1.0 v photo response non-uniformity * 5 * 6 prnu -5 - +5 % *2: an increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. use a jfet or cmos input, high-impedance input op amp as the buffer amplifier. *3: storage time ts=10 ms *4: voltage difference with respect to vo, ts=10 ms *5: uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level and using 510 pixels excluding both ends pixels as follows: prnu= ? x/x 100 (%) x: the average output of all pixels, ? x: difference between x and maximum or minimum output. *6: measured with a tungsten lamp of 2856 k. spectral response (typical example) kmpdb0230ec 80 200 600 1000 300 400 800 700 1100 500 900 wavelength (nm) relative sensitivity (%) 0 60 100 40 20 (typ. ta=25 ?c)
cmos linear image sensor S9227 timing chart kmpdc0166eb 3 parameter symbol min. typ. max. unit start pulse width tpw (st) t1 530 ns - 1100 ms - start pulse high width thw (st) t1 8 ns - 1000 ms - start pulse low width tlw (st) t1 15 ns - 100 ms - start pulse rise and fall time tr (st), tf (st) 0 20 30 ns clock pulse width tpw (clk), t1 200 - 20000 ns clock pulse rise and fall time tr (clk), tf (clk) 0 20 30 ns video delay time 1 tvd1 32 40 48 ns video delay time 2 tvd2 40 50 60 ns note: the internal circuit starts operating at the rise of clk pulse immediately after st pulse sets to low. the integration time equals the high period of st pulse plus 6 clk cycles. the output from 1st channel appears 14 clocks plus 100 ns after the falling edge of st pulse. the eos pulse is output 25 ns after the falling edge of clk pulse. the output after reading the last pixel (512 ch) is indefinite. tpw (clk), t1 tlw (st) 2.5 clocks 8.5 clocks integration time 1 2 3 4 13 clk st video eos clk st clk video 14 15 thw (st) tf (clk) tf (st) tr (st) tr (clk) tvd2 tvd1 tlw (st) thw (st) tpw (st) tpw (clk) tpw (st) 512 trig block diagram kmpdc0167ea clk timing generator shift register hold circuit charge amp array st 8 1234 photodiode array 511 512 7 gnd 1 6 5 vdd eos video 4
cmos linear image sensor S9227 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. cat. no. kmpd1074e04 feb. 2007 dn 4 pin connections pin no. symbol name of pin i/o 1 gnd ground i 2 nc open 3 nc open 4 vdd supply voltage i 5 video video output o 6 eos end of scan o 7 st start pulse i 8 clk clock pulse i dimensional outline (unit: mm) 0.5 7.62 2.54 1.5 0.15 0.5 5.0 0.5 active area 6.4 0.25 1 ch 14 85 7.87 0.25 0.763 pin no. 1 12.0 0.3 7.62 1.05 0.15 0.25 chip precautions during use (1) electrostatic countermeasures this device has a built-in protection circuit against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static dis- charges. also protect this device from surge voltages which might be caused by peripheral equipment. (2) incident window if dust or dirt gets on the light incident window, it will show up as black blemishes on the image. when cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. then blow compressed air onto the window surface so that no spot or stain remains. (3) soldering to prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. soldering should be performed within 5 seconds at a soldering temperature below 260 c. (4) operating and storage environments always observe the rated temperature range when handling the device. operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. kmpda0173ea kmpdc0264ea gnd nc nc vdd 1 2 3 4 8 7 6 5 clk st eos video
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